Fabrication of Highly Crystalline Corundum-Structured α-(Ga1-xFex)2O3 Alloy Thin Films on Sapphire Substrates
Fabrication of Highly Crystalline Corundum-Structured α-(Ga1-xFex)2O3 Alloy Thin Films on Sapphire Substrates
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DOI：
10.1143/apex.2.075501
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发表时间：
2009-07-01
影响因子：
2.3
通讯作者：
Fujita, Shizuo
中科院分区：
文献类型：
--
作者：
Kaneko, Kentaro;Nomura, Taichi;Fujita, Shizuo
采用喷雾化学气相沉积法在c面蓝宝石衬底上制备了高度结晶的刚玉结构α-（Ga 1-xFex）（2）O3合金薄膜。X射线衍射摇摆曲线的半峰全宽小于100 arcsec的整个范围内的x从0到1。光学带隙被人为地调整到α-Ga 2 O 3和α-Fe 2 O 3之间的值，即2.2和5.3 eV，改变膜中的Fe含量x。磁性测量表明α-（Ga 1-xFex）（2）O 3-（x=0.24）薄膜在110 K具有铁磁性质。(C)2009日本应用物理学会
Highly crystalline corundum-structured alpha-(Ga1-xFex)(2)O-3 alloy thin films were fabricated on c-plane sapphire substrates by using a mist chemical vapor deposition method. The full-widths at half maximum of X-ray diffraction rocking curves were smaller than 100 arcsec for the entire range of x from 0 to 1. Optical band gaps were artificially tuned to a value between those of alpha-Ga2O3 and alpha-Fe2O3, that is, 2.2 and 5.3 eV with changing the Fe content x in the films. Magnetic measurements revealed ferromagnetic properties of a alpha-(Ga1-xFex)(2)O-3 (x=0.24) thin film at 110 K. (C) 2009 The Japan Society of Applied Physics