First temperature stage evolution of irradiation-induced defects in tungsten studied by positron annihilation spectroscopy
First temperature stage evolution of irradiation-induced defects in tungsten studied by positron annihilation spectroscopy
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DOI：
10.1016/j.jnucmat.2008.03.002
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发表时间：
2008-05-31
影响因子：
3.1
通讯作者：
Sauvage, T.
中科院分区：
文献类型：
--
作者：
Debelle, A.;Barthe, M. F.;Sauvage, T.
用多普勒展宽谱研究了800 keV（3）He离子在多晶钨中径迹区产生的类空位缺陷随退火温度的变化。一个慢正电子束，与多普勒展宽谱仪耦合，被用来测量低和高动量湮灭分数，S和W，分别作为正电子能量的函数，在不同的注量从10（14）到5 × 10（16）cm（-2）注入钨样品。随退火温度变化的S（E）、W（E）和S（W）曲线的行为清楚地表明，无论注入能量密度如何，辐照诱导的空位状缺陷开始在523和573 K之间演化。该第一温度阶段演变对应于在注入期间产生的单空位的迁移，以形成更大的空位状缺陷，其深度分布不同于初始辐射诱导的缺陷。(C)2008 Elsevier B. V.保留所有权利。
The behaviour of vacancy like implantation-induced defects created in the track region of 800 keV(3)He ions in polycrystalline tungsten was studied by Doppler broadening spectroscopy as a function of annealing temperature. A slow positron beam, coupled with a Doppler broadening spectrometer, was used to measure the low- and high-momentum annihilation fractions, S and W, respectively, as a function of positron energy in tungsten samples implanted at different fluences from 10(14) to 5 x 10(16) cm(-2). The behaviour of the S(E), W(E) and S(W) plots with the annealing temperature clearly indicates that the irradiation-induced vacancy like defects begin to evolve between 523 and 573 K, whatever the implantation fluence. This first temperature stage evolution corresponds to the migration of the monovacancies created during implantation to form larger vacancy like defects of which depth profile is different from the initial radiation-induced defects one. (C) 2008 Elsevier B.V. All rights reserved.