Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Field Emission Properties
Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Field Emission Properties
复制标题
多重堆叠硅量子点磷掺杂对电子场致发射性能的影响
DOI:
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发表时间:
2015
期刊:
影响因子:
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通讯作者:
Mitsuhisa Ikeda and Seiichi Miyazaki
中科院分区:
文献类型:
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作者:
Daichi Takeuchi;Katsunori Makihara;Akio Ohta;Mitsuhisa Ikeda and Seiichi Miyazaki