Quantum confinement of Mott electrons in ultrathin LaNiO3/LaAlO3 superlattices
Quantum confinement of Mott electrons in ultrathin LaNiO3/LaAlO3 superlattices
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DOI：
10.1103/physrevb.83.161102
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发表时间：
2011-04-13
影响因子：
3.7
通讯作者：
Chakhalian, J.
中科院分区：
文献类型：
--
作者：
Liu, Jian;Okamoto, S.;Chakhalian, J.
利用直流输运和共振软X射线吸收光谱研究了(LaNiO_3)(N)/(LaAlO_3)(3)(n=3，5和10)超晶格中由于量子限制(QC)引起的电子重构。在QC极限附近，观察到了从巡回电子行为到局域态的Mott型跃迁。在相变过程中，体系呈现出电荷有序的趋势。从头算计算结果与吸收光谱吻合较好，表明顶端配体的空穴密度被高度抑制，导致电子结构发生强烈的变化。在维度交叉时，胞体动力学平均场计算支持在LaNiO_3异质结构超薄板中出现Mott绝缘体基态。
We investigate the electronic reconstruction in (LaNiO3)(n)/(LaAlO3)(3) (n = 3, 5, and 10) superlattices due to the quantum confinement (QC) by dc transport and resonant soft x-ray absorption spectroscopy. In proximity to the QC limit, a Mott-type transition from an itinerant electron behavior to a localized state is observed. The system exhibits tendency toward charge-order during the transition. Ab initio cluster calculations are in good agreement with the absorption spectra, indicating that the apical ligand hole density is highly suppressed, resulting in a strong modification of the electronic structure. At the dimensional crossover cellular dynamical-mean-field calculations support the emergence of a Mott insulator ground state in the heterostructured ultrathin slab of LaNiO3.