XPS depth analysis of CuO by electrospray droplet impact
XPS depth analysis of CuO by electrospray droplet impact
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DOI：
10.1002/sia.4843
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发表时间：
2012-08
影响因子：
1.7
通讯作者：
Y. Sakai;S. Ninomiya;K. Hiraoka
中科院分区：
文献类型：
--
作者：
Y. Sakai;S. Ninomiya;K. Hiraoka
电喷雾液滴冲击（EDI）是一种辐照后几乎不留下表面损伤的新型蚀刻技术。我们以前报道过EDI辐照后没有观察到有机材料的选择性蚀刻。本文对Ar+和EDI刻蚀的CuO进行了XPS对比研究。虽然通过Ar+蚀刻可以观察到CuO的明显还原，但EDI没有发生化学修饰。在本实验条件下，估计了EDI对氧化铜的腐蚀速率为几nm/min。版权所有©2012 John Wiley & Sons， Ltd。
The electrospray droplet impact (EDI) is presented as a new etching technique that induces almost no surface damage left after irradiation. We have previously reported that selective etching was not observed after EDI irradiation for organic materials. The present work made a comparative XPS study on the CuO etched by Ar+ and EDI. Although marked reduction of CuO was observed with Ar+ etching, no chemical modification was occurred by EDI. The etching rate of a few nm/min with EDI was estimated for copper oxide under the present experimental conditions. Copyright © 2012 John Wiley & Sons, Ltd.