DIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XAS
DIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XAS
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DOI：
10.1103/physrevb.38.3263
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发表时间：
1988-08-15
影响因子：
3.7
通讯作者：
LOGAN, RA
中科院分区：
文献类型：
--
作者：
BOSIO, C;STAEHLI, JL;LOGAN, RA
通过光透射测量测定了Al x Ga 1−x As外延层中2k处的直接激子能量（0.10< x< 0.75）。采用微探针法对铝的浓度进行了评价。从这些数据，得到了直接能隙对x的依赖关系；与文献比较清楚地表明，光学测定合金浓度时常用的关系式E gap Γ (x)必须修正。与以前的评估相反，我们对E差距Γ (x)的非线性贡献的确定与理论预测值一致。
The direct exciton energy at 2 K in Al x Ga 1− x As epitaxial layers (0.10< x< 0.75) has been determined by optical transmission measurements. Microprobe analysis has been employed for the evaluation of the aluminum concentration. From these data, the direct-energy-gap dependence on x has been obtained; its comparison with the literature clearly shows that the relation E gap Γ (x) commonly used in the optical determination of the alloy concentration must be revised. Contrary to older evaluations, our determination of the nonlinear contribution to E gap Γ (x) agrees with the theoretically predicted values.