Rapid carrier relaxation by phonon emission in In0.6Ga0.4As/GaAs quantum dots
Rapid carrier relaxation by phonon emission in In0.6Ga0.4As/GaAs quantum dots
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In0.6Ga0.4As/GaAs 量子点中声子发射的快速载流子弛豫
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
R. Leon
中科院分区：
文献类型：
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作者：
S. Marcinkevičius;A. Gaarder;R. Leon
用时间分辨光致发光光谱研究了In0.6Ga0.4As/GaAs量子点结构中的载流子转移.
Carrier transfer into quantum dots has been investigated by time-resolved photoluminescence spectroscopy in a set of In0.6Ga0.4As/GaAs quantum dot structures with gradually changing interband trans ...