Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with Si2H6
Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with Si2H6
复制标题
Si2H6 在 Si(100) 表面化学气相沉积过程中的光电子强度振荡
DOI：
10.1063/1.111723
复制
发表时间：
1994
影响因子：
4
通讯作者：
H. Kato
中科院分区：
文献类型：
--
作者：
Y. Takakuwa;Y. Enta;Tetsuji Yamaguchi;T. Hori;M. Niwano;N. Miyamoto;H. Ishida;H. Sakamoto;T. Nishimori;H. Kato
我们发现，在Si2H6气体化学气相沉积过程中，Si(100)表面二聚体悬挂键衍生表面态的光电子强度呈现周期性振荡。测量了衬底温度和Si2H6压力对振荡周期的依赖关系。利用SiO_2图案化晶片的选择性生长方法，明确了一个振荡周期对应于厚度为1.36A的Si(100)面的一个原子层的Si生长。
We have found that the photoelectron intensity of the dimer‐dangling‐bond‐derived surface state on Si(100) shows a periodic oscillation during chemical vapor deposition with Si2H6 gas. The substrate temperature and Si2H6‐pressure dependence of the oscillation period was measured. By use of a selective‐growth method using SiO2‐patterned wafers, one oscillation period was clarified to correspond to the Si growth of one atomic layer of the Si(100) plane with a thickness of 1.36 A.