Thermoelectric generation of orbital magnetization in metals
Thermoelectric generation of orbital magnetization in metals
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DOI：
10.1103/physrevb.103.045401
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发表时间：
2020-02
期刊：
影响因子：
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通讯作者：
C. Xiao;Huiying Liu;Jianzhou Zhao;Shengyuan A. Yang;Q. Niu
中科院分区：
文献类型：
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作者：
C. Xiao;Huiying Liu;Jianzhou Zhao;Shengyuan A. Yang;Q. Niu
我们提出了一种轨道磁热效应，其中温度梯度为布洛赫电子产生轨道磁化强度 (OM)，并且我们提出了电和热感应 OM 的统一理论，该理论对金属和绝缘体都有效。我们揭示了 OM 存在固有响应，其敏感性完全由带间 Berry 连接、带间轨道矩和量子度量等能带几何量决定。该理论可以很容易地与第一性原理计算相结合来研究真实材料。作为一个例子，我们计算了 CrI$_{3}$ 双层中的 OM 响应，其中内在贡献占主导地位。讨论了内在和外在响应的温度缩放、声子阻力的影响以及声子角动量对 OM 的贡献。
We propose an orbital magnetothermal effect wherein a temperature gradient generates an orbital magnetization (OM) for Bloch electrons, and we present a unified theory for electrically and thermally induced OM, valid for both metals and insulators. We reveal that there exists an intrinsic response of OM, for which the susceptibilities are completely determined by the band geometric quantities such as interband Berry connections, interband orbital moments, and the quantum metric. The theory can be readily combined with first-principles calculations to study real materials. As an example, we calculate the OM response in CrI$_{3}$ bilayers, where the intrinsic contribution dominates. The temperature scaling of intrinsic and extrinsic responses, the effect of phonon drag, and the phonon angular momentum contribution to OM are discussed.