Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method
Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method
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DOI：
10.1016/j.jallcom.2009.12.113
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发表时间：
2010-03
影响因子：
6.2
通讯作者：
A. Simões;F. Garcia;C. Riccardi
中科院分区：
文献类型：
--
作者：
A. Simões;F. Garcia;C. Riccardi
研究了用软化学方法在铂/二氧化钛/二氧化硅/硅(100)衬底上制备的Nb修饰的铋铁氧体薄膜(BFN)的室温压电响应特性。薄膜生长温度为500℃，Nb掺杂对提高BFO薄膜的电学性能是有效的。XPS结果表明，掺Nb的BFO薄膜具有Fe3+价态。研究发现，掺Nb的BFO薄膜具有良好的电学性能，如提高了电容-电压和高的压电系数，这预示着Nb掺杂的BFO薄膜有望成为未来基于磁铁电体的存储材料。
This paper focuses on the piezoresponse characteristics at room temperature in niobium modified bismuth ferrite thin films (BFN) deposited on Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method. The obtained films were grown at a temperature of 500°C. The Nb dopant is effective in improving electrical properties of BFO films. XPS results show a single-phase Nb-doped BFO thin films with a Fe3+valence state. It was found that Nb-doped BFO thin films exhibited good electrical properties, such as improved capacitance–voltage and high piezoeletric coefficient, indicating a promising material for use in future memories based on magnetic ferroelectrics.