Magnetic property and magnetoresistance in Fe/ITO multilayers
Magnetic property and magnetoresistance in Fe/ITO multilayers
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DOI：
10.1016/j.jmmm.2008.03.044
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发表时间：
2008-09
影响因子：
2.7
通讯作者：
Tian Yu;Xing-Qing Li;Ding-Guo Li;Shen-Fen Hao;Liang-Min Wang;Zhao-Gang Zhang;Guangheng Wu;Xinju Z
中科院分区：
文献类型：
--
作者：
Tian Yu;Xing-Qing Li;Ding-Guo Li;Shen-Fen Hao;Liang-Min Wang;Zhao-Gang Zhang;Guangheng Wu;Xinju Z
直流磁控溅射Fe/ITO多层膜存在巨磁电阻效应。对其磁性能、电学性能和磁阻进行了研究。发现在50K附近存在一个临界温度，在该温度附近，电阻率和磁电阻率随温度的变化呈现突变。在低温下，电阻与温度的关系服从莫特1/4定律。室温和12.5K时的最大磁电阻率分别为2.0%和6.7%。低温下磁电阻比的增加是由于自旋混合效应的减弱。
Giant magnetoresistance was found in DC magnetron sputtering Fe/ITO multilayers. The magnetic properties, electrical properties and magnetoresistance were investigated. A critical temperature is found around 50K where the temperature dependence of resistivity and magnetoresistance ratio exhibit an abruptly change. The temperature dependence of resistance is found to obey Mott's 1/4 law for low temperature. The max magnetoresistance ratio of 2.0% and 6.7% is found at room temperature and 12.5K, respectively. The increase of magnetoresistance ratio at low temperature is due to the decrease of spin-mixing effect.