Characterization of Mn-doped 3C-SiC prepared by ion implantation
Characterization of Mn-doped 3C-SiC prepared by ion implantation
复制标题
DOI：
10.1063/1.2709749
复制
发表时间：
2007-04
影响因子：
3.2
通讯作者：
F. Takano;Wenhong Wang;H. Akinaga;H. Ofuchi;S. Hishiki;T. Ohshima
中科院分区：
文献类型：
--
作者：
F. Takano;Wenhong Wang;H. Akinaga;H. Ofuchi;S. Hishiki;T. Ohshima
报道了离子注入法制备Mn掺杂3C-SiC的表征。进行Mn离子以1× 1016 cm-2的剂量注入到3C-SiC同质外延晶片中。高温退火后的注入过程中发现，以提高铁磁有序。透射磁圆二色性和磁化强度的研究表明，低于245 K的铁磁行为。退火后的晶格弛豫被认为是一个可能的机制。
The characterization of Mn-doped 3C-SiC prepared by ion implantation is reported. Implantation of Mn ions at a dose of 1×1016cm−2 into a 3C-SiC homoepitaxial wafer was carried out. High temperature annealing following the implantation process was found to enhance the ferromagnetic ordering. Transmission magnetic circular dichroism and magnetization investigations demonstrated a ferromagnetic behavior below 245K. The lattice relaxation induced by the postannealing is considered a possible mechanism of this outcome.