Improved hole injection and transport of organic light-emitting devices with an efficient p-doped hole-injection layer
Improved hole injection and transport of organic light-emitting devices with an efficient p-doped hole-injection layer
复制标题
DOI：
10.1063/1.3279142
复制
发表时间：
2009-12
影响因子：
4
通讯作者：
Dan-Dan Zhang-Dan;Jing Feng;Hai Wang;Yu Bai;Qidai Chen;Shiyong Liu;Hongbo Sun
中科院分区：
文献类型：
--
作者：
Dan-Dan Zhang-Dan;Jing Feng;Hai Wang;Yu Bai;Qidai Chen;Shiyong Liu;Hongbo Sun
掺Fe_3O_4的4，4′，4″-tris(3-methylphenylphenylamino)triphenylamine薄膜是一种高效的p型空穴注入层。P型HIL的三(8-羟基喹啉)铝基有机电致发光器件在8V时的开启电压和亮度分别为2.4V和29360cd/m2，而非掺杂器件的开启电压和亮度分别为3V和6005cd/m2。对空穴器件的紫外/可见光/近红外吸收、X射线光电子能谱和电流密度-电压特性的测试结果表明，空穴注入和输运的改善是器件性能改善的主要原因。
A 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine thin film doped with Fe3O4 has been demonstrated an efficient p-type hole-injection layer (HIL) in organic light-emitting devices (OLEDs). The tris-(8-hydroxyquinoline) aluminum-based OLEDs with the p-type HIL exhibit a very low turn-on voltage of 2.4 V and a high luminance of 29 360 cd/m2 at 8 V, while it is 3 V and 6005 cd/m2, respectively, for the nondoped devices. The improvement in the device performance is clarified as arising from the improved hole injection and transport by the results of ultraviolet/visible/near-infrared absorption, x-ray photoelectron spectra and current density-voltage characteristics of hole-only devices.