Microstructural and electronic transport properties of PtxSi/p-Si(100) metal-semiconductor composite films
Microstructural and electronic transport properties of PtxSi/p-Si(100) metal-semiconductor composite films
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PtxSi/p-Si(100)金属-半导体复合薄膜的微观结构和电子输运性能
DOI：
10.1016/s0167-577x(99)00032-4
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发表时间：
1999
影响因子：
3
通讯作者：
Tasnim Bari
中科院分区：
文献类型：
--
作者：
A. Rahman;C. Bates;A. Marshall;S. Qadri;Tasnim Bari
对溅射PtxSi/p-Si(100)薄膜进行了表征，以评估其在掩埋肖特基势垒器件中的应用潜力。用透射电子显微镜、X射线衍射仪和霍尔法测量了样品的结构、电子输运性质和颗粒分布。本文提出的发现为这些结构作为工作在3-5μm范围内的光电探测器的潜在器件应用提供了洞察力。
Sputtered PtxSi/p-Si(100) films were characterized to assess their potential for applications in buried Schottky barrier devices. Transmission electron microscopy (TEM), X-ray diffraction and Hall measurements were used to measure structural and electronic transport properties and particle distribution. The findings presented in this paper provide insight into the potential device applications of these structures as photodetector devices operating in the 3–5 μm range.