Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film
Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film
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DOI：
10.1063/1.4793537
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发表时间：
2013-02-18
影响因子：
4
通讯作者：
Datta, Suman
中科院分区：
文献类型：
--
作者：
Kar, Ayan;Shukla, Nikhil;Datta, Suman
这封信调查的固有电子开关时间与绝缘体到金属的相变在外延单晶二氧化钒（VO 2）薄膜使用阻抗谱和交流电导率测量。绝缘和金属相共存的存在，固有的外延（001）取向的VO 2薄膜生长在（001）金红石型TiO 2基板上，在一个有限的电容与VO 2薄膜在其绝缘相，限制了电子开关速度。深入了解的开关特性和它们的相关性的传输机制，在光的相位共存VO 2双端器件进行了详细的缩放研究。(C)2013年美国物理学会。[http：//dx.doi.org/10.1063/1.4793537]
This letter investigates the intrinsic electronic switching time associated with the insulator-to-metal phase transition in epitaxial single crystal vanadium dioxide (VO2) thin films using impedance spectroscopy and ac conductivity measurements. The existence of insulating and metallic phase coexistence, intrinsic to the epitaxial (001) oriented VO2 thin film grown on a (001) rutile TiO2 substrate, results in a finite capacitance being associated with the VO2 films in their insulating phase that limits the electronic switching speed. Insights into the switching characteristics and their correlation to the transport mechanism in the light of phase coexistence are obtained by performing a detailed scaling study on VO2 two-terminal devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793537]