Charge trapping in organic transistor memories: On the role of electrons and holes
Charge trapping in organic transistor memories: On the role of electrons and holes
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DOI：
10.1016/j.orgel.2009.07.005
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发表时间：
2009-11-01
影响因子：
3.2
通讯作者：
Heremans, P.
中科院分区：
文献类型：
--
作者：
Debucquoy, M.;Rockele, M.;Heremans, P.
在这项工作中，我们研究了以聚合物绝缘体作为栅电介质的有机晶体管存储器中的电荷陷阱。我们发现电荷俘获的机制是从半导体沟道到栅电介质的隧穿。根据半导体及其工艺的不同，电荷捕获可能会导致较大的双向阈值电压漂移，如果半导体是双极的，或者只在一个方向上漂移(单极半导体)。这些结果表明，最佳的存储性能需要两个极性的电荷载流子，因为降低编程磁场的最有效方法是用相反极性的注入电荷覆盖捕获的电荷。(C)2009爱思唯尔B.V.保留所有权利。
In this work, we study charge trapping in organic transistor memories with a polymeric insulator as gate dielectric. We found that the mechanism of charge trapping is tunneling from the semiconductor channel into the gate dielectric. Depending on the semiconductor and its processing, charge trapping can result in large bi-directional threshold voltage shifts, in case the semiconductor is ambipolar, or in shifts in only one direction (unipolar semiconductor). These results indicate that optimal memory performance requires charge carriers of both polarities, because the most efficient method to lower the programming field is by overwriting a trapped charge by an injected charge of opposite polarity. (C) 2009 Elsevier B.V. All rights reserved.