Electron channelling contrast imaging of interfacial defects in strained silicon-germanium layers on silicon
Electron channelling contrast imaging of interfacial defects in strained silicon-germanium layers on silicon
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DOI：
10.1080/01418619308219357
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发表时间：
1993-07
影响因子：
1.6
通讯作者：
A. Wilkinson;G. Anstis;J. Czernuszka;N. Long;P. Hirsch
中科院分区：
文献类型：
--
作者：
A. Wilkinson;G. Anstis;J. Czernuszka;N. Long;P. Hirsch
摘要利用电子沟道衬度技术对生长在体硅（001）衬底上的应变Si 1- x格克斯外延层的界面缺陷进行了成像。的通道图像获得从散装标本使用高效的背散射电子检测器，在其他常规的扫描电子显微镜配备了LaB 6电子源。尽管在某些情况下缺陷在样品表面以下超过1 μm，但观察到良好的沟道对比度。发现空间分辨率太低，无法区分已知被分组在紧密间隔的簇中的单个位错。相反，图像显示了这些位错簇的分布。对比度的变化以外的解释g.B = g.B x u = 0 criterions. Image模拟证实了实验观察，图像对比度更强，而入射光束接近垂直于位错线方向。该技术是优秀的在显示.
Abstract Images of defects at interfaces of strained Si1 - x Gex epilayers grown on bulk Si (001) substrates have been formed using the electron channelling contrast technique. The channelling images were obtained from bulk specimens using a highly efficient back scattered electron detector in an otherwise conventional scanning electron microscope equipped with a LaB6 electron source. Good channelling contrast was observed despite the defects in some cases being over 1 μm below the specimen surface. The spatial resolution was found to be too low to distinguish individual dislocations known to be grouped in closely spaced clusters. Instead the images show the distribution of these dislocation clusters. Contrast variations other than those explained by g.b = g.b x u = 0 criteria were found. Image simulations confirmed the experimental observation that image contrast is stronger whilst the incident beam is close to the perpendicular to the dislocation line direction. The technique is excellent at showing the...