2DEG properties in InGaN/InN/InGaN-based double channel HEMTs
2DEG properties in InGaN/InN/InGaN-based double channel HEMTs
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InGaN/InN/InGaN 基双通道 HEMT 的 2DEG 特性
DOI：
10.1002/pssc.200983608
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
A. Hashimoto and A. Yamamoto
中科院分区：
文献类型：
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作者：
Md. Tanvir Hasan;Md. Rejvi Kaysir;Md. Sheraju Islaml;Ashraful G. Bhuiyan;Md. Rafiqul Islam;A. Hashimoto and A. Yamamoto
本文描述了InGaN/InN/InGaN双沟道高电子迁移率晶体管（DHEMT）的二维电子气特性。其中包括对2DEG片状载流子浓度和迁移率的深入理论研究。2DEG的流动性计算使用系综蒙特卡罗考虑到所有相关的散射。计算的DHEMT的片状载流子浓度高达1.77× 1014 cm-2。而对于单沟道高电子迁移率晶体管（SHEMT），计算的薄层载流子浓度为7.06× 1013 cm-2。在77 K时，当面载流子浓度为ns = 5× 1012 cm-2时，DHEMT和SHEMT的最大总2DEG迁移率分别为12× 104和8× 104 cm 2 V-1 s-1。因此，双沟道的2DEG片载流子浓度和迁移率高于常规的单沟道HEMT。2DEG片载流子浓度和迁移率的高值强烈表明基于InGaN/InN/InGaN的双沟道HEMT对于高性能高速器件的制造是非常有前途的（© 2010 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）。
This paper describes the 2DEG properties of InGaN/InN/InGaN double channel high electron mobility transistor (DHEMT). These include an in‐depth theoretical investigation of 2DEG sheet carrier concentration and mobility. The 2DEG mobility is calculated using ensemble Monte Carlo taking into account all relevant scatterings. The calculated sheet carrier concentration reaches as high as 1.77×1014cm‐2for DHEMT. While for single channel high electron mobility transistor (SHEMT) the calculated sheet carrier concentration was found to be 7.06×1013cm‐2. The maximum total 2DEG mobility is found to be around 12×104and 8×104cm2V‐1s‐1, respectively, for DHEMT and SHEMT for a sheet carrier concentration ofns= 5×1012cm‐2at 77 K. Thus, the 2DEG sheet carrier concentration and mobility for dual channel is higher than conventional single channel HEMTs. The high values of 2DEG sheet carrier concentration and mobility strongly suggest that the InGaN/InN/InGaN based double channel HEMT is very promising for the fabrication of high performance high speed device (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)