Growth and properties of thin GaAs epitaxial layers on Al2O3
Growth and properties of thin GaAs epitaxial layers on Al2O3
复制标题
Al2O3 上薄 GaAs 外延层的生长及其性能
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
M. Goorsky
中科院分区：
文献类型：
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作者：
T. Kuech;A. Segmüller;T. Kuan;M. Goorsky
在Al_2O_3衬底上进行了金属有机气相外延生长，生长温度范围为600-800 °C。利用多种物理表征技术获得了外延生长的初始阶段及其对外延层物理性质的影响。外延层的初始生长是通过岛的形成和结合进行的，而岛的初始密度是外延层晶体质量的重要决定因素。提出了一种无公度生长模型来解释薄膜性质与生长参数的关系。即使在非常厚的层中也存在缺陷，限制了这些材料在器件结构中的应用。
The metalorganic vapor‐phase epitaxy of GaAs on Al2O3 substrates was carried out over a growth temperature range of 600–800 °C. Several physical characterization techniques were used to obtain information on the initial stages of epitaxial growth and its influence on the physical properties of the epitaxial layer. The initial GaAs growth proceeds by island formation and coalescence, and the initial density of GaAs islands is a strong determinant of the epitaxial layer crystalline quality. An incommensurate growth model is presented to explain the dependence of the film properties on the growth parameters. The presence of defects in even very thick layers limits the applicability of these materials in device structures.