Thermal stability and electrical characteristics of NiSi films with electroplated Ni(W) alloy
Thermal stability and electrical characteristics of NiSi films with electroplated Ni(W) alloy
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DOI：
10.1016/j.apsusc.2011.05.062
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发表时间：
2011-09
影响因子：
6.7
通讯作者：
Y. Xin;A. Hu;Ming Li;D. Mao
中科院分区：
文献类型：
--
作者：
Y. Xin;A. Hu;Ming Li;D. Mao
In this study, an electroplating method to deposited Ni, crystalline NiW(c-NiW), amorphous NiW (a-NiW) films on P-type Si(100) were used to form Ni-silicide (NiSi) films. After annealed at various temperatures, sheet resistance of Ni/Cu, c-NiW/Cu and a-NiW/Cu was measured to observe the performance of those diffusion barrier layers. With W added in the barrier layer, the barrier performance was improved. The results of XRD and resistance measurement of the stacked Si/Ni(W)/Cu films reveal that Cu atom could diffuse through Ni barrier layer at 450°C, could diffuse through c-NiW at 550°C, but could hardly diffuse through a-NiW barrier layer. c-NiW layer has a better barrier performance than Ni layer, meanwhile the resistance is lower than a-NiW layer.
