High-contrast 40 Gb/s operation of a 500 μm long silicon carrier-depletion slow wave modulator
High-contrast 40 Gb/s operation of a 500 μm long silicon carrier-depletion slow wave modulator
复制标题
DOI：
10.1364/ol.37.003504
复制
发表时间：
2012-09-01
期刊：
影响因子：
3.6
通讯作者：
Sanchis, P.
中科院分区：
文献类型：
--
作者：
Brimont, A.;Thomson, D. J.;Sanchis, P.
在这封信中，我们展示了一个高效，紧凑，高对比度和低损耗的硅慢波调制器的行波马赫-曾德尔干涉仪的基础上，两个500 μ m长的慢波移相器。40 Gb/s的操作与6.6 dB的消光比在正交和片上插入损耗仅为6 dB。这些结果证实了慢光作为基于等离子体色散效应增强硅调制器性能的手段的益处。(c)2012美国光学学会
In this Letter, we demonstrate a highly efficient, compact, high-contrast and low-loss silicon slow wave modulator based on a traveling-wave Mach-Zehnder interferometer with two 500 mu m long slow wave phase shifters. 40 Gb/s operation with 6.6 dB extinction ratio at quadrature and with an on-chip insertion loss of only 6 dB is shown. These results confirm the benefits of slow light as a means to enhance the performance of silicon modulators based on the plasma dispersion effect. (c) 2012 Optical Society of America