Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge
Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge
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Ge 上外延生长的 InAs 量子点激光器的相对强度噪声
DOI：
10.1364/oe.25.028817
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发表时间：
2017-11
期刊：
影响因子：
3.8
通讯作者：
Wang Cheng
中科院分区：
文献类型：
--
作者：
Zhou Yue-Guang;Zhou Cheng;Cao Chun-Fang;Du Jiang-Bing;Gong Qian;Wang Cheng
报道了外延生长在Ge衬底上的InAs量子点激光器的相对强度噪声（RIN）特性。发现Ge基Qdot激光器的最小RIN约为-120 dB/Hz，比Ge基Qdot激光器的最小RIN高15 dB。
We report the relative intensity noise (RIN) characteristics of an InAs quantum dot (Qdot) laser epitaxially grown on the Ge substrate. It is found that the minimum RIN of the Ge-based Qdot laser is around −120 dB/Hz, which is 15 dB higher than that of a