Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.
Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.
复制标题
黑磷基场效应晶体管在室温下同时实现接近理想的亚阈值摆幅和高空穴迁移率
DOI：
10.1038/srep24920
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发表时间：
2016-04-22
影响因子：
4.6
通讯作者：
He Z
中科院分区：
文献类型：
--
作者：
Liu X;Ang KW;Yu W;He J;Feng X;Liu Q;Jiang H;Dan Tang;Wen J;Lu Y;Liu W;Cao P;Han S;Wu J;Liu W;Wang X;Zhu D;He Z
黑磷（BP）由于其上级载流子输运特性而成为下一代晶体管应用的有前途的二维（2D）材料。在其他问题中，同时实现降低的亚阈值摆动和增强的空穴迁移率仍然是一个挑战，这需要仔细优化的BP/栅极氧化物界面。在这里，我们报告的实现高性能BP晶体管集成HfO 2高k栅介质使用低温CMOS工艺。所制造的器件显示出接近理想的亚阈值摆幅（SS）为~69 mV/dec和室温空穴迁移率超过>400 cm 2/Vs。这些品质因数被基准测试为同类最佳，优于先前报道的在传统SiO2栅极电介质上实现的BP晶体管。X射线光电子能谱（XPS）分析进一步揭示了一个更稳定的化学BP时，形成HfO 2 high-kas相对于SiO2，这引起了一个更好的界面质量，占theSS和空穴迁移率的改善证据。这些结果揭示了黑磷作为未来纳米电子器件应用的新兴通道材料的潜力。
Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2high-kgate dielectric using a low temperature CMOS process. The fabricated devices were shown to demonstrate a near ideal subthreshold swing (SS) of ~69 mV/dec and a room temperature hole mobility of exceeding >400 cm2/Vs. These figure-of-merits are benchmarked to be the best-of-its-kind, which outperform previously reported BP transistors realized on traditional SiO2gate dielectric. X-ray photoelectron spectroscopy (XPS) analysis further reveals the evidence of a more chemically stable BP when formed on HfO2high-kas opposed to SiO2, which gives rise to a better interface quality that accounts for theSSand hole mobility improvement. These results unveil the potential of black phosphorus as an emerging channel material for future nanoelectronic device applications.