Ultraviolet photoelectrical properties of a n-ZnO nanorods/p-diamond heterojunction
Ultraviolet photoelectrical properties of a n-ZnO nanorods/p-diamond heterojunction
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n-ZnO纳米棒/p-金刚石异质结的紫外光电特性
DOI：
10.1039/c5ra06054k
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发表时间：
2015-01-01
期刊：
影响因子：
3.9
通讯作者：
Pan, Yuewu
中科院分区：
文献类型：
--
作者：
Sang, Dandan;Li, Hongdong;Pan, Yuewu
通过研究n-ZnO纳米棒/p-金刚石异质结的暗、光I-V特性，研究了n-ZnO纳米棒/p-金刚石异质结的紫外光响应特性。它显示出典型的整流行为，在5 V的暗电流和光电流的整流比分别为3.2和8.8。器件在紫外光照射下的开启电压比暗电流下的开启电压低3倍，器件的理想因子降低。在10 V的紫外光照射下，正向电流比暗电流高4倍以上，而在-10 V时，漏电流略有增加。通过表面光电压（SPV）测量分析了光生电荷及其转移过程。
The ultraviolet (UV) photoresponse properties of a n-ZnO nanorods/p-diamond heterojunction were investigated by studying the dark and photo I-V characteristics. It shows typical rectifying behavior with a rectification ratio of 3.2 and 8.8 at 5 V for the dark current and the photocurrent, respectively. The turn on voltage under UV illumination is three times lower than that under the dark current and the ideality factor of the device is decreased. The forward current under UV illumination is more than 4 times higher than the dark one at 10 V whereas the leakage current shows a little increase at -10 V. The electrical transport behaviors are investigated both under the dark current and the photocurrent. The photogenerated charges and their transfer processes were analyzed by surface photovoltage (SPV) measurements.