Catalyst-seeded synthesis and field emission properties of flowerlike Si-doped AlN nanoneedle array
Catalyst-seeded synthesis and field emission properties of flowerlike Si-doped AlN nanoneedle array
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DOI：
10.1063/1.2416050
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发表时间：
2006-12-18
影响因子：
4
通讯作者：
Cheng, H. -M.
中科院分区：
文献类型：
--
作者：
Tang, Y. B.;Cong, H. T.;Cheng, H. -M.
花状硅掺杂 AlN 纳米针阵列是通过在 NH3 气氛中蒸发 AlCl4 和 SiCl4，将钴颗粒接种在 Si 基底上而生长的。纳米针的长度为几微米，其基部直径和尖端直径分别在50-150和5-30 nm范围内。场发射（FE）测量表明，Si掺杂AlN纳米针阵列具有低开启场（类似于1.8 V/μm）和高场增强因子（类似于3271），表明它是场发射应用的有前途的候选者。此外，这种催化剂种子和硅掺杂方法可以促进高效 AlN 纳米结构 FE 器件的开发。 (c) 2006 年美国物理研究所。
Flowerlike Si-doped AlN nanoneedle array is grown from cobalt particles seeded on Si substrate by evaporating AlCl4 and SiCl4 in NH3 atmosphere. The nanoneedles are several microns in length, and their base and tip diameters are in the range of 50-150 and 5-30 nm, respectively. Field emission (FE) measurements show that the Si-doped AlN nanoneedle array has a low turn-on field (similar to 1.8 V/mu m) and a high field enhancement factor (similar to 3271), indicating that it is a promising candidate for FE applications. In addition, this catalyst-seeded and Si-doped method may facilitate the development of efficient AlN nanostructure FE devices. (c) 2006 American Institute of Physics.