Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories
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DOI：
10.1063/1.4893605
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发表时间：
2014-08-18
影响因子：
4
通讯作者：
Alff, L.
中科院分区：
文献类型：
--
作者：
Sharath, S. U.;Kurian, J.;Alff, L.
化学计量HfO基电阻性开关层的导电丝形成电压随层厚呈线性增加。使用生长在多晶TiN/Si(001)衬底上的强还原氧缺乏型氧化钨薄膜，形成电压的厚度依赖性被强烈地抑制。相反，观察到高达200 nm层厚的约3V的几乎恒定的形成电压。这一效应表明，所有样品都在几纳米厚的氧化HfO2表面层中发生了灯丝的形成和转换，而高度缺氧的薄膜本身只是一个氧空位储存库。(C)2014 AIP出版有限责任公司。
The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO2 surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir. (C) 2014 AIP Publishing LLC.