Large tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions
Large tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions
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DOI：
10.1103/physrevlett.87.026602
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发表时间：
2001-07-09
影响因子：
8.6
通讯作者：
Higo, Y
中科院分区：
文献类型：
--
作者：
Tanaka, M;Higo, Y
我们在外延生长的 Ga1-xMnxAs/AlAs/Ga1-xMnxAs 铁磁半导体隧道结中观察到非常大的隧道磁阻 (TMR)。当沿薄膜平面中的[100]轴施加磁场时，在具有非常薄（小于或等于1.6 nm）AlAs隧道势垒的结中获得了超过70%（最大75%）的大TMR比。发现 TMR 随着势垒厚度的增加而迅速减小，这是通过假设载流子的平行波矢量在隧道效应中守恒的计算来解释的。
We have observed very large tunneling magnetoresistance (TMR) in epitaxially grown Ga1-xMnxAs/AlAs/Ga1-xMnxAs ferromagnetic semiconductor tunnel junctions. Large TMR ratios more than 70% (maximum 75%) were obtained in junctions with a very thin (less than or equal to1.6 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR was found to rapidly decrease with increasing barrier thickness, which is explained by calculations assuming that the parallel wave vector of carriers is conserved in tunneling.