Effect of crystallographic orientation of Co2MnGe Heusler-alloy film on its surface roughness and ordered structure
Effect of crystallographic orientation of Co2MnGe Heusler-alloy film on its surface roughness and ordered structure
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DOI：
10.1063/1.2713222
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发表时间：
2007-05-01
影响因子：
3.2
通讯作者：
Matsui, M.
中科院分区：
文献类型：
--
作者：
Takeda, Y.;Yoshimura, S.;Matsui, M.
利用不同的缓冲层和底层研究了Co2MnGe薄膜择优取向的方向和程度对表面粗糙度和有序结构的影响。通过测量 Co2MnGe(400) 或 Co2MnGe(220) 反射的 X 射线衍射摇摆曲线的半峰全宽 (FWHM) 来估计 Co2MnGe 薄膜的择优取向程度。除了没有缓冲层和底层的 Co2MnGe 薄膜外，无论择优取向的方向和程度如何，都获得了与外延 Co2MnGe 薄膜几乎相同的高 B2 有序结构和高饱和磁化强度。此外，当降低X射线衍射摇摆曲线的半高宽时，表面粗糙度也降低，并且对于具有高择取向度的Co2MnGe膜，获得了小的表面粗糙度（与外延Co2MnGe膜的情况几乎相同的值）。与Co2MnGe(100)情况相比，具有(110)择优取向的Co2MnGe薄膜获得了更小的表面粗糙度。从表面能的角度解释了表面粗糙度的变化趋势。 (c) 2007 年美国物理研究所。
The effects of direction and degree of preferred orientation of Co2MnGe film on the surface roughness and the ordered structure were investigated by utilizing various buffer layers and underlayers. Degrees of preferred orientation of Co2MnGe film were estimated by measuring the full width at half maximum (FWHM) of the x-ray diffraction rocking curve for Co2MnGe(400) or Co2MnGe(220) reflections. A high B2 ordered structure and a high saturation magnetization, which is almost the same value as in the case of epitaxial Co2MnGe films, were obtained regardless of the direction and degree of preferred orientation, except in the case of the Co2MnGe films without both buffer layers and underlayers. Also, surface roughness decreased when decreasing the FWHM of x-ray diffraction rocking curve, and the small surface roughness (that is almost the same value as in the case of epitaxial Co2MnGe films) was obtained for Co2MnGe films with the high degree of preferred orientation. A smaller surface roughness was obtained in the case of Co2MnGe films with (110) preferred orientation compared with the Co2MnGe(100) case. The tendencies of change of the surface roughness were explained from the viewpoint of surface energy. (c) 2007 American Institute of Physics.