Structure and dislocation development in mono-like silicon
Structure and dislocation development in mono-like silicon
复制标题
DOI：
10.1002/pssa.201532105
复制
发表时间：
2015-10-01
影响因子：
2
通讯作者：
Di Sabatino, M.
中科院分区：
文献类型：
--
作者：
Ekstrom, K. E.;Stokkan, G.;Di Sabatino, M.
本文研究了从单晶籽晶中生长的定向类单晶硅锭中观察到的低寿命区的结构< 110 >。这些区域与籽晶结处形成的位错团有关，并讨论了几种产生机制。由于籽晶之间的物理接触而产生的位错只能通过在籽晶之间引入间隙来完全避免。然而，发现大的差距受到替代生成过程的影响，而小的差距则没有。在籽晶和外围晶粒中产生的位错不一定移动到主晶体中，并且低寿命区域主要与在籽晶结构上方产生的位错有关。发现位错形成沿沿着方向排列的团簇< 111 >，并提出通过从两个籽晶之间的边界平面在{111}-平面上滑移而发生。低寿命区和相应的位错簇的程度，不含或小间隙的结，似乎主要取决于种子之间的取向差，并通过获得足够低的取向差，高体寿命也可以保留在结。沿着主轴的取向差的分析表明，较大的取向差是可以容忍的，如果取向差被限制到一个单一的倾斜轴。
The current paper investigates the structure of low-lifetime areas observed in a < 110 >-oriented mono-like silicon ingot grown from monocrystalline seeds. These areas are related to dislocation clusters forming at seed junctions and several generation mechanisms are discussed. Dislocations generated due to physical contact between seeds could only be completely avoided by introducing gaps between the seeds. Large gaps were, however, found to suffer from alternative generation processes not found in small gaps. Dislocations generated in the seeds and in peripheral grains does not necessarily move in to the main crystal and low-lifetime areas are mainly related to dislocations generated above the seeding structure. Dislocations are found to form clusters aligning along < 111 >-directions and are proposed to happen by glide on {111}-planes from the boundary plane between two seed crystals. The extent of low-lifetime areas and corresponding dislocation clusters, for junctions containing no or small gaps, appear to mainly depend on the misorientation between seeds and by attaining sufficiently low misorientation the high bulk lifetime can be retained also at the junctions. Analysis of the misorientations along principal axes indicates that larger misorientations can be tolerated if the misorientation is limited to a single tilt axis.