Employing Thin‐Film Delamination for the Formation of Shadow Masks for Nanostructure Fabrication
Employing Thin‐Film Delamination for the Formation of Shadow Masks for Nanostructure Fabrication
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DOI：
10.1002/adma.200502187
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发表时间：
2006-04
影响因子：
29.4
通讯作者：
M. Elbahri;S. Rudra;S. Wille;S. Jebril;M. Scharnberg;Dadhichi R. Paretkar;R. Kunz;Huang Rui
中科院分区：
文献类型：
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作者：
M. Elbahri;S. Rudra;S. Wille;S. Jebril;M. Scharnberg;Dadhichi R. Paretkar;R. Kunz;Huang Rui
Destructive phenomena, such as fracture or delamination, have been studied in materials science for a long time, [1] and are now also well characterized in thin-film technology. [2,3] In most cases, the negative consequences of such effects have been highlighted. Predictions are thus available for circum-stances under which failure occurs and procedures for avoiding such failure. Even though fracture as a phenomenon is quite controllable, only very recently has thin-film fracture been systematically employed to create structures. [4–7] Thin-film cracks follow strain fields and can be controlled in width, length, and density. Therefore, they are considered to be ideal templates for nanowire deposition. [4,5] The choice of the thin-film–substrate system is limited only by its ability to be fractured. Consequently, a wide range of materials can be used for this approach. This has been shown in two independent studies, wherein several nanowire and substrate-material combinations were fabricated, either by vacuum deposition [4] or by electroless Ni plating. [5] Two process steps are necessary to form a nanowire from a surface crack: 1) the deposition of material to create a layer on the thin film, filling the crack with a nanowire, and 2) isolation of the nanowire, wherein the thin film is removed along with the superfluous deposited material (mask lift-off). By using the ability to align cracks with strain fields, nanowires with contacts, nanowire junctions, continuous wires, or wires with nanoscopic gaps in between, [4] have been fabricated. This “fracture approach” has been limited, until now, to nanowires consisting of homogeneous materials. Also, the patterning of the nanowire network is restricted by the limitations
