Removal of Diazonaphthoquinone/Novolak Resist Using UV Laser (266 nm)
Removal of Diazonaphthoquinone/Novolak Resist Using UV Laser (266 nm)
复制标题
使用紫外激光 (266 nm) 去除重氮萘醌/酚醛清漆抗蚀剂
DOI：
10.1295/polymj.37.813
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发表时间：
2005
期刊：
影响因子：
2.8
通讯作者：
K. Yoshida
中科院分区：
文献类型：
--
作者：
H. Horibe;T. Kamimura;T. Hata;Masashi Yamamoto;I. Yamato;Osamu Nigo;M. Fujita;A. Yoshikado;K. Yoshida
这项研究揭示了一种有前途的去除正性重氮萘醌/酚醛清漆抗蚀剂的方法。将 Nd3+:YAG (Y3Al5O12) 脉冲激光 (266 nm) 的第四谐波照射到抗蚀剂上。当激光功率超过35mJ/cm2时去除抗蚀剂，并用94mJ/cm2的激光功率去除250nm厚的抗蚀剂。 X射线光电子能谱（XPS）证明，当受到近700 mJ/cm2的照射时，1100 nm厚的抗蚀剂可以从Si表面完全去除。三英寸硅片（45.58 mm2）上的抗蚀剂在两分钟内被激光去除。通过光学显微镜观察，未发现加工后的硅片有任何损坏。这种方法有利于环境。
This study revealed a promising method for removing positive-tone diazonaphthoquinone/novolak resist. The fourth harmonic of an Nd3+:YAG (Y3Al5O12) pulsed laser (266 nm) was irradiated onto the resist. Resist was removed when laser power exceeded 35 mJ/cm2, and a 250 nm-thick resist was removed with a laser power of 94 mJ/cm2. X-ray Photoelectron Spectroscopy (XPS) proved that 1100 nm-thick resist could be completely removed from a Si surface when it was irradiated almost 700 mJ/cm2. The resist onto three inch Si wafer (45.58 mm2) was removed in two minutes by laser. No damage to the processed Si wafer could be detected by optical microscopic observation. This method is good for environment.