SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor
SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor
复制标题
7x100mm/3x150mm 卧式热壁间歇式反应器中的 SiC 外延生长
DOI：
10.4028/www.scientific.net/msf.821-823.165
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
M. Künle
中科院分区：
文献类型：
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作者：
T. Höchbauer;M. Leitner;R. Kern;M. Künle
利用东京电子株式会社的水平热壁间歇反应器Probus-SiCTM，在100 mm和150 mm(0001)取向(4°偏离取向)的4H碳化硅晶面上进行了同质外延生长。标准的外延生长工艺显示出非常高水平的晶片内、晶片对晶片、以及层厚度以及n型掺杂浓度的运行对运行的一致性。已经达到了小于5e13/cm3的N型本底掺杂水平。原子力显微镜测量表明表面粗糙度为0.2 nm(均方根)。与外延有关的缺陷，如三角形缺陷、胡萝卜和由于跌落而形成的内生颗粒的密度非常低，这一点得到了高阻挡成品率的证实。
We present results on the homo-epitaxial growth on the Si face of 100 mm and 150 mm (0001)-oriented (4° off-orientation) 4H SiC wafers utilizing the horizontal hot-wall batch reactor Probus-SiCTM from Tokyo Electron Limited. Standard epitaxial growth processes show very high levels of intra-wafer, intra-run wafer-to-wafer, and run-to-run uniformities in the layer thickness as well as in the n-type doping concentration. N-type background doping levels less that 5e13 /cm3 have been reached. AFM measurements reveal a surface roughness of 0.2nm (rms). The density of epitaxy related defects such as triangular defects, carrots, and ingrown particles due to downfall are very low, as confirmed by high blocking yields.