Monte Carlo simulation of electron-hole thermalization in photoexcited bulk semiconductors.
Monte Carlo simulation of electron-hole thermalization in photoexcited bulk semiconductors.
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DOI：
10.1103/physrevb.42.5685
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发表时间：
1990-09
期刊：
影响因子：
--
通讯作者：
R. Joshi;R. Grondin;D. Ferry
中科院分区：
文献类型：
--
作者：
R. Joshi;R. Grondin;D. Ferry
我们使用系综蒙特卡罗技术模拟激光激发后电子-空穴等离子体的热化过程。具体来说，我们集中在最近两个实验的结果上。我们的计算定量地证实了在${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As.的前10ps中存在分离的有效电子和空穴温度载流子冷却可以用非平衡声子和载流子简并来解释。通过与带边发光实验的比较，揭示了电子-空穴散射和谷间散射的贡献特征。
We use an ensemble Monte Carlo technique to model the thermalization of electron-hole plasmas following a laser excitation. For concreteness, we concentrate on the results of two recent experiments. Our calculations quantitatively confirm the existence of separate effective electron and hole temperatures during the first 10 ps in ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As. The carrier cooling can be explained by invoking both nonequilibrium phonons and carrier degeneracy. Comparison with a band-edge luminescence experiment brings out features concerning the electron-hole and intervalley scattering contributions.