Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors
Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors
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生长终止条件对AlGaN/GaN高电子迁移率晶体管性能的影响
DOI：
10.1063/1.1372620
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发表时间：
2001
影响因子：
4
通讯作者：
U. Mishra
中科院分区：
文献类型：
--
作者：
S. Keller;R. Vetury;G. Parish;S. Denbaars;U. Mishra
研究了顶部2.5nm厚的AlGaN盖层的生长条件和晶片冷却条件对AlGaN/GaN高电子迁移率晶体管性能的影响。采用金属有机化学气相沉积法在蓝宝石衬底上制备了AlGaN/GaN异质结构，该异质结构由3 μm厚的半绝缘GaN层和18 nm厚的Al0.33Ga0.67N层组成，其顶部2.5nm是在不同条件下沉积的。器件的功率性能对于所有样品都严重降低，其中AlGaN的顶部2.5nm的Al含量增加和/或顶层生长期间的氨流量减少。当帽层的生长条件与AlGaN层的其余部分的生长条件相同时，但是当晶片在纯氮气中冷却时，观察到输出功率密度的适度改善。
The effect of the growth conditions of the top 2.5 nm thick AlGaN cap layer and wafer cool down conditions on AlGaN/GaN high electron mobility transistor performance was investigated. The AlGaN/GaN heterostructures were deposited on sapphire by metalorganic chemical vapor deposition and consisted of a 3 μm thick semi-insulating GaN layer and an 18 nm thick Al0.33Ga0.67N layer, the top 2.5 nm of which was deposited under various conditions. The power performance of the devices severely degraded for all samples where the Al content of the top 2.5 nm of AlGaN was increased and/or the ammonia flow during growth of the top layer was decreased. A modest improvement in the output power density was observed when the growth conditions of the cap layer were identical of those of the rest of the AlGaN layer, but when the wafer was cooled down in pure nitrogen.
影响因子：
3.7
作者：
Bernardini, F;Fiorentini, V;Vanderbilt, D
通讯作者：
Vanderbilt, D