Anisotropic lattice relaxation and uniaxial magnetic anisotropy in Fe/InAs(100)-4×2
Anisotropic lattice relaxation and uniaxial magnetic anisotropy in Fe/InAs(100)-4×2
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DOI：
10.1103/physrevb.62.1167
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发表时间：
2000-07
影响因子：
3.7
通讯作者：
Yongbing Xu;D. Freeland;M. Tselepi;J. Bland
中科院分区：
文献类型：
--
作者：
Yongbing Xu;D. Freeland;M. Tselepi;J. Bland
用原位磁光克尔效应和反射高能电子衍射研究了室温下在InAs(100)-4×2衬底上生长的外延Fe薄膜的磁各向异性和晶格弛豫。实验结果表明，与重构半导体表面的本征原子尺度结构相关的对称性破缺导致了超薄区的面内各向异性晶格驰豫和面内单轴磁各向异性。我们认为这是铁磁/半导体异质结中的普遍现象。©2000美国物理学会。
The magnetic anisotropy and the lattice relaxation of epitaxial Fe films grown on InAs(100)-4×2 at room temperature have been studied using in situ magneto-optical Kerr effect and reflection high-energy electron diffraction. The experimental results demonstrate that the symmetry breaking associated with the intrinsic atomic scale structure of the reconstructed semiconductor surface induces an in-plane anisotropic lattice relaxation and an in-plane uniaxial magnetic anisotropy in the ultrathin region. We propose that this is a general phenomenon in ferromagnetic/semiconductor heterostructures. © 2000 The American Physical Society.