Nanowire photodetectors based on wurtzite semiconductor heterostructures
Nanowire photodetectors based on wurtzite semiconductor heterostructures
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DOI：
10.1088/1361-6641/ab0cb8
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发表时间：
2019-04
影响因子：
1.9
通讯作者：
M. Spies;E. Monroy
中科院分区：
文献类型：
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作者：
M. Spies;E. Monroy
使用纳米线进行光检测为提高吸收效率提供了机会，同时减少了器件的电子横截面。纳米线呈现出有趣的特征，如与硅衬底的兼容性，这提供了集成探测器和读出电路的可能性，并促进了它们向柔性衬底的转移。异质结构的引入为纳米线光电探测器的应用和性能改进开辟了有趣的前景。在纳米线中，可以实现轴向和径向(核壳)异质结构，这两种类型可以结合起来获得发展量子光探测器所需的三维载流子限制(线中点)。如果纳米线呈现纤锌矿晶体结构，异质界面的存在会由于组分之间的极化差异而产生内部电场。这种极化诱导的内部电场，就像那些由异质结或第二类异质结构引起的电场一样，可以被发明来有利于光生电子和空穴的分离。本文综述了纳米线光电探测器的最新进展，包括单纳米线和异质结构纳米线。
Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. Nanowires present interesting features like compatibility with silicon substrates, which offers the possibility of integrating detector and readout circuitry and facilitates their transfer to flexible substrates. The incorporation of heterostructures in nanowire photodetectors opens interesting prospects for application and performance improvement. Within a nanowire, it is possible to implement axial and radial (core-shell) heterostructures, and these two types can be combined to obtain the three-dimensional carrier confinement (dot-in-a-wire) which is required for the development of quantum photodetectors. If the nanowires present wurtzite crystallographic structure, the presence of heterointerfaces can induce internal electric fields due to the difference of polarization between the constituents. Such polarization-induced internal electric fields, like those induced by heterojunctions or type-II heterostructures, can be ingeneered to favor the separation of the photogenerated electrons and holes. This paper provides a general review of latest progresses in nanowire photodetectors, including single nanowires and heterostructured nanowires.