Vapor-liquid-solid growth of small- and uniform-diameter silicon nanowires at low temperature from Si2H6
Vapor-liquid-solid growth of small- and uniform-diameter silicon nanowires at low temperature from Si2H6
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DOI：
10.1143/apex.1.014003
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发表时间：
2008-01-01
影响因子：
2.3
通讯作者：
Oda, Shunri
中科院分区：
文献类型：
--
作者：
Akhtar, Saeed;Usami, Koichi;Oda, Shunri
我们报道了在气-液-固（VLS）机制下，通过Si2H6低温分解合成具有控制直径的高密度硅纳米线（SiNWs）时，350℃是克服金（Au）聚集的临界生长温度。低温生长被认为是在小直径（12 nm）和均匀直径（5 nm）的SiNW成核过程中保持Au液滴（8 +/- 5 nm）初始分布的必要条件。在高温下，随着金硅共晶的聚集，尺寸增大，导致SiNWs的直径大而随机。在（111）方向上生长的金属丝的晶体质量、缺陷形成和形态与尺寸有关。(C) 2008日本应用物理学会。
We report 350 degrees C as a critical growth temperature for overcoming the aggregation of gold (Au) in the synthesis of high-density silicon nanowires (SiNWs) with controlled diameters in a vapor-liquid-solid (VLS) mechanism by the low-temperature decomposition Of Si2H6. Low-temperature growth is considered essential for preserving the initial distribution of Au droplets (8 +/- 5 nm) during SiNW nucleation with small (12 nm) and uniform ( 5 nm) diameters. Au-Si eutectics increase in size with aggregation at high temperatures, resulting in SiNWs with large and random diameters. The crystal quality, defect formation, and morphology of the wires, grown in the (111) direction, are size dependent. (C) 2008 The Japan Society of Applied Physics.