Semiconductor Raman lasers
Semiconductor Raman lasers
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半导体拉曼激光器
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
J. Nishizawa
中科院分区：
文献类型：
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作者：
K. Suto;J. Nishizawa
采用GaP纵向光学声子模的半导体喇曼激光器具有很低的光输入功率阈值。为了进一步降低阈值光输入功率和功率密度，采用了厚度为160微米的波导型晶体。外延层厚度为280µm的外延层为低阈值半导体喇曼激光器，其阈值输入功率密度低至1.7×106W/cm2。
The semiconductor Raman laser using the longitudinal optical phonon mode of GaP has a very low threshold value of optical input power. To reduce the threshold optical input power and power density further, a crystal as thin as 160 µm with a wave-guiding structure is used. Epitaxial layers of GaP with a thickness of 280 µm are demonstrated as the low-threshold semiconductor Raman laser, for which the threshold input power density is as low as 1.7 × 106 W/cm2.