High spin polarization in epitaxial films of ferrimagnetic Mn3Ga
High spin polarization in epitaxial films of ferrimagnetic Mn3Ga
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DOI：
10.1103/physrevb.83.020405
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发表时间：
2011-01-12
影响因子：
3.7
通讯作者：
Coey, J. M. D.
中科院分区：
文献类型：
--
作者：
Kurt, H.;Rode, K.;Coey, J. M. D.
铁磁性Mn3Ga表现出低饱和磁化强度(M-S=0.11mAm-1)和高垂直各向异性的独特组合，其单轴各向异性常数K-u=0.89mJM(-3)。用点接触安德烈夫反射法测量，外延c轴膜的自旋极化高达58%。这些外延薄膜将能够支持用于自旋转移扭矩存储器的热稳定的亚10纳米比特。
Ferrimagnetic Mn3Ga exhibits a unique combination of low saturation magnetization (M-s = 0.11 MAm-1) and high perpendicular anisotropy with a uniaxial anisotropy constant of K-u = 0.89 MJm(-3). Epitaxial c-axis films exhibit spin polarization as high as 58%, measured using point-contact Andreev reflection. These epitaxial films will be able to support thermally stable sub-10-nm bits for spin-transfer torque memories.