Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode
Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode
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DOI：
10.1016/j.jcrysgro.2016.12.005
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发表时间：
2017-04
影响因子：
1.8
通讯作者：
Akihiro Nakamura;M. Suzuki;K. Fujii;Y. Nakano;M. Sugiyama
中科院分区：
文献类型：
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作者：
Akihiro Nakamura;M. Suzuki;K. Fujii;Y. Nakano;M. Sugiyama
