Controlled formation of oxide materials by laser molecular beam epitaxy
Controlled formation of oxide materials by laser molecular beam epitaxy
复制标题
通过激光分子束外延控制氧化物材料的形成
DOI：
10.1016/0169-4332(94)90177-5
复制
发表时间：
1994
影响因子：
6.7
通讯作者：
M. Yoshimoto
中科院分区：
文献类型：
--
作者：
H. Koinuma;M. Yoshimoto
自从我们首次将激光分子束外延，即超高真空脉冲激光淀积用于氧化物薄膜的生长以来，这种方法，特别是与原位RHEED和XPS相结合，已经被证明对于氧化膜的单胞逐层外延生长是非常有用的。介绍了激光分子束外延生长氧化物薄膜和异质结构的概念和实验结果，包括典型的钙钛矿型氧化物和在SrTiO_3衬底上生长的无限层碱土铜酸盐，以及在Si衬底上生长CeO_2。用原子尺度表征了薄膜的表面态和界面态，讨论了激光分子束外延生长氧化物薄膜的问题和实际适用性。
Ever since our first application of laser MBE, i.e. pulsed-laser deposition in ultrahigh vacuum to the growth of oxide films, this method, especially in combination with in situ RHEED and XPS, has been verified to be quite useful for the unit cell layer-by-layer epitaxial growth of oxide films. The concept and experimental results of laser MBE growth of oxide films and heterostructures are presented in respect of typical perovskite oxides and infinite-layer alkaline earth cuprates growths on SrTiO3substrate as well as of CeO2growth on Si substrate. Atomic scale characterization of surface and interface states of the films has been conducted to discuss the problems and practical applicability of laser MBE growth of oxide films.