A reduced complexity process for organic thin film transistors
A reduced complexity process for organic thin film transistors
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DOI：
10.1063/1.126138
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发表时间：
2000-03
影响因子：
4
通讯作者：
H. Klauk;D. Gundlach;M. Bonse;C. Kuo;T. Jackson
中科院分区：
文献类型：
--
作者：
H. Klauk;D. Gundlach;M. Bonse;C. Kuo;T. Jackson
A simplified device structure for depletion-mode organic thin film transistors is described in which the gate electrode and the source/drain contacts are prepared in the same process step, thus reducing the number of material depositions and photolithography steps. Based on the simplified device structure and using the small-molecule aromatic hydrocarbon pentacene as the active material, organic thin film transistors were fabricated on glass substrates with carrier mobility of 0.6 cm2/V s, on/off current ratio of 105, and subthreshold slope of 0.5 V/decade.
