Photonic crystal nanocavity with a Q factor exceeding eleven million
Photonic crystal nanocavity with a Q factor exceeding eleven million
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DOI：
10.1364/oe.25.001769
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发表时间：
2017-02-06
期刊：
影响因子：
3.8
通讯作者：
Noda, Susumu
中科院分区：
文献类型：
--
作者：
Asano, Takashi;Ochi, Yoshiaki;Noda, Susumu
同时具有小模态体积和高质量（Q）因子的光子晶体纳米腔在这十年中开辟了光子学的新研究领域。在这里，我们提出了将 Q 因子提高到千万级以上的一个重要关键。对由绝缘体上硅 (SOI) 基板制造的空气桥型异质结构纳米腔的光子寿命进行的系统研究表明，清洁纳米腔底部（掩埋氧化物侧）的重要性。在去除纳米腔下方的埋氧化层后，进行重复热氧化和氧化物去除工艺，实现了大于 1100 万的实验 Q 因子，这是有史以来最高的实验 Q 因子。研究结果不仅为硅PC纳米腔提供了重要信息，也为一般硅纳米光子器件和光子电子会聚系统提供了重要信息。 (C) 2017年美国光学学会
Photonic crystal nanocavities that simultaneously possess small modal volumes and high quality (Q) factors have opened up novel research areas in photonics during this decade. Here, we present an important key for the increase of Q factors to ranges beyond ten million. A systematic investigation on photon lifetimes of air-bridge-type heterostructure nanocavities fabricated from silicon on insulator (SOI) substrates indicated the importance of cleaning the bottom side (buried oxide side) of the nanaocavites. Repeated thermal oxidation and an oxide removal process applied after the removal of the buried oxide layer underneath the nanocavities realized an experimental Q factor greater than eleven million, which is the highest experimental Q ever recorded. The results provide important information not only for Si PC nanocavities but also for general Si nanophotonic devices and photonic electronic convergence systems. (C) 2017 Optical Society of America