Temperature dependent photoluminescence of single CdS nanowires
Temperature dependent photoluminescence of single CdS nanowires
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DOI：
10.1063/1.2357003
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发表时间：
2006-09-18
影响因子：
4
通讯作者：
Lauhon, L. J.
中科院分区：
文献类型：
--
作者：
Hoang, Thang Ba;Titova, L. V.;Lauhon, L. J.
利用温度相关光致发光技术研究了单CdS纳米线的电子特性。在低温下，在许多纳米线中可以观察到近带边缘（NBE） PL和空间局域缺陷相关的PL。缺陷状态的强度是判断纳米线特性和结构均匀性的灵敏工具。随着温度的升高，缺陷状态以不同的速率迅速淬火，留下NBE PL，直到室温占主导地位。来自纳米线的所有PL线都紧密跟随温度相关的带边缘，类似于在批量cd中观察到的情况。(c) 2006年美国物理研究所。
Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near band edge (NBE) PL and spatially localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from the nanowires follow closely the temperature dependent band edge, similar to that observed in bulk CdS. (c) 2006 American Institute of Physics.