Ab initio calculations of the giant magnetoresistance.
Ab initio calculations of the giant magnetoresistance.
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DOI：
10.1063/1.373288
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发表时间：
1995-10
影响因子：
8.6
通讯作者：
P. Zahn;I. Mertig;Manuel Richter;H. Eschrig
中科院分区：
文献类型：
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作者：
P. Zahn;I. Mertig;Manuel Richter;H. Eschrig
我们用从头算方法计算了磁性多层膜的巨磁电阻。采用屏蔽Korringa-Kohn-Rostoker方法，用自旋密度泛函理论计算了多层膜的电子结构。用格林函数方法描述了纳米结构缺陷在多层膜中的散射。散射势的计算是自洽的。输运性质用拟经典方法求解Boltzmann方程，包括层状体系的电子结构和各向异性散射。波尔兹曼方程的求解是迭代进行的，同时考虑了散射和散射项(顶点修正)。由于我们考虑的是铁磁系统，所以采用了双电流模型。讨论了具有3D过渡金属缺陷的Co/Cu多层膜的剩余电阻率和巨磁阻率的变化趋势。
We present ab initio calculations of the giant magnetoresistance in magnetic multilayers. The electronic structure of the multilayers is calculated by spin density functional theory using a screened Korringa–Kohn–Rostoker method. The scattering of nanostructural defects in the multilayers is described by means of a Green’s function method. The scattering potentials are calculated self-consistently. The transport properties are treated quasiclassically solving the Boltzmann equation including the electronic structure of the layered system and the anisotropic scattering. The solution of the Boltzmann equation is performed iteratively taking into account both scattering out and scattering in terms (vertex corrections). Since we consider ferromagnetic systems a two current model is applied. Trends of residual resistivities and giant magnetoresistance ratios are discussed for Co/Cu multilayers with 3d transition metal defects.