Single photon emission from InGaN/GaN quantum dots up to 50 K
Single photon emission from InGaN/GaN quantum dots up to 50 K
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DOI：
10.1063/1.3683521
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发表时间：
2012-02-06
影响因子：
4
通讯作者：
Forchel, Alfred
中科院分区：
文献类型：
--
作者：
Kremling, Stefan;Tessarek, Christian;Forchel, Alfred
利用微光致发光（μ PL）光谱研究了单个InGaN量子点的光学性质。采用金属有机物气相外延法在蓝宝石衬底上生长量子点。在蓝色光谱范围内观察到尖锐且孤立的单激子发射线。QD发光显示出高达96%的垂直于生长轴（c轴）的强烈的线性偏振度，在xy平面中没有优先排列。二阶自相关测量进行脉冲激发和单光子发射高达50 K的证明。(C)2012年美国物理学会。[doi：10.1063/1.3683521]
We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence (mu PL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emission lines in the blue spectral range were observed. The QD luminescence shows a strong degree of linear polarization up to 96% perpendicular to the growth axis (c-axis) with no preferential alignment in the xy plane. Second order autocorrelation measurements were performed under pulsed excitation and single photon emission up to 50 K is demonstrated. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683521]