Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method
Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method
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DOI：
10.1063/1.4860958
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发表时间：
2014-01
影响因子：
4
通讯作者：
Chuan Liu;Yong Xu;G. Ghibaudo;Xubing Lu;T. Minari;Yong‐Young Noh
中科院分区：
文献类型：
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作者：
Chuan Liu;Yong Xu;G. Ghibaudo;Xubing Lu;T. Minari;Yong‐Young Noh
接触电阻（RC）是影响有机场效应晶体管（ofet）性能的主要因素，涉及电荷注入、输运和器件结构等多个因素。本文重点讨论了传统传递长度法中收敛点的物理意义，并通过仿真阐明了电荷注入与ofet几何参数之间的关系。我们还定义了半导体中类带/跳频输运对电荷注入过程的影响，其中较少的跳频输运导致越来越少的栅极电压依赖性RC。这些结果得到了五苯OFET实验的证实，揭示了汇聚点在OFET研究中的价值。
Contact resistance (RC), which dominates the performance of organic field-effect transistors (OFETs), relates multiple factors such as charge injection, transport, and device architecture. Here, we focus on physical meaning of the convergence point in conventional transfer-length method, and clarify the correlation between charge injection and geometrical parameters of OFETs by simulations. We also defined the effect of band-like/hopping transport in semiconductor on the charge injection process, where less hopping transport results in lower and less gate-voltage dependent RC. These results were confirmed by experiments on pentacene OFETs and reveal the values of convergence point in OFET research.