On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors
On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors
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可调谐高频电容器品质因数与调谐比之间的权衡
DOI：
10.1109/ted.2009.2026391
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发表时间：
2009
影响因子：
3.1
通讯作者：
R. Hueting
中科院分区：
文献类型：
--
作者：
M. Tiggelman;K. Reimann;F. van Rijs;J. Schmitz;R. Hueting
在微波频率的可调谐和可切换设备的基准的物理限制的基础上，显示其可重构蜂窝应用的潜力。性能限制概述了每一个给定的技术，重点是品质因数（Q）和调谐比（eta）的优点。这些数字的优点的几个可调和可切换的技术方面的最新技术的可视化和讨论。如果不符合这些标准，申请将不可行。品质因数通常可以与调谐比进行折衷。可调谐电容器技术的基准测试表明，晶体管开关电容器、变容二极管和铁电变容二极管在2 GHz下的调谐比低于3时表现良好，GaAs变容二极管具有优势。平面微机电电容开关有潜力超越所有其他技术的调谐比高于8。基于可调电容器的电容器具有最高的小型化潜力，而半导体器件则受益于现有的制造基础设施。
A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications. Performance limitations are outlined for each given technology focusing on the quality factor (Q) and tuning ratio (eta) as figures of merit. The state of the art in terms of these figures of merit of several tunable and switchable technologies is visualized and discussed. If the performance of these criteria is not met, the application will not be feasible. The quality factor can typically be traded off for tuning ratio. The benchmark of tunable capacitor technologies shows that transistor-switched capacitors, varactor diodes, and ferroelectric varactors perform well at 2 GHz for tuning ratios below 3, with an advantage for GaAs varactor diodes. Planar microelectromechanical capacitive switches have the potential to outperform all other technologies at tuning ratios higher than 8. Capacitors based on tunable dielectrics have the highest miniaturization potential, whereas semiconductor devices benefit from the existing manufacturing infrastructure.