Investigation of stored energy in plasma deposited TiNx films
Investigation of stored energy in plasma deposited TiNx films
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DOI：
10.1116/1.580888
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发表时间：
1997-11
期刊：
影响因子：
--
通讯作者：
H. Wulff;C. Eggs
中科院分区：
文献类型：
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作者：
H. Wulff;C. Eggs
采用空心阴极电弧蒸发装置（HCAED）制备了TiNx薄膜，研究了低能离子轰击对薄膜生长和性能的影响。薄膜沉积在不同的氮气流量和负衬底电压，并通过X射线光电子能谱（XPS）和薄膜X射线衍射研究。通过朗缪尔探针测量和能量分辨质谱分析等离子体。从氮气流实验和负衬底电压实验的结果可以得出结论，离子浓度以及离子能量决定膜的性质。从等离子体监测和朗缪尔探针测量获得的数据被用来计算的能量通量的生长膜的沉积参数。XPS提供有关化学成分的信息。从X射线谱线的位移和展宽，我们可以确定薄膜中的位错密度、位错浓度和畴尺寸。
Thin TiNx films were deposited using a hollow cathode arc evaporation device (HCAED) for studying the influence of low energy ion bombardment on film growth and film properties. Films were deposited at various nitrogen gas flows and negative substrate voltages and investigated by x-ray photoelectron spectroscopy (XPS) and thin film x-ray diffraction. The plasma was analyzed by Langmuir probe measurements and energy resolved mass spectrometry. From both the results of nitrogen flow experiments and the negative substrate voltage experiments it can be concluded that the ion concentration as well as the ion energy determine the film properties. The data obtained from plasma monitoring and Langmuir probe measurements were used to calculate the energy flux to the growing film in relation to the deposition parameters. XPS provides information about the chemical composition. From shifting and broadening of x-ray line profiles concentrations of interstitials, dislocation densities, and domain sizes in the films we...