Semiconductor-metal transition in GaAs nanowires under high pressure
Semiconductor-metal transition in GaAs nanowires under high pressure
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高压下砷化镓纳米线的半导体-金属转变
DOI：
10.1088/1674-1056/28/7/076401
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发表时间：
2019-07-01
影响因子：
1.7
通讯作者：
Zhao, Jian-Hua
中科院分区：
文献类型：
--
作者：
Liang, Yi-Lan;Yao, Zhen;Zhao, Jian-Hua
利用同步辐射x射线衍射法和红外反射光谱分析方法研究了室温下高达26.2 Gpa的高压下GaAs纳米线的结构相变和电学性质。在20.0 Gpa左右观察到闪锌矿向正交相的转变。在相同的压力范围内，红外反射光谱证实了GaAs纳米线的压力诱导金属化。金属化来源于闪锌矿向斜方晶系的相变。减压结果表明，闪锌矿向斜方晶系的相变和压力诱导的金属化是可逆的。与块体材料相比，由于尺寸效应和较高的表面能，GaAs纳米线显示出更大的体弹性和更高的转变压力。
We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at room temperature. The zinc-blende to orthorhombic phase transition was observed at around 20.0 GPa. In the same pressure range, pressure-induced metallization of GaAs nanowires was confirmed by infrared reflectance spectra. The metallization originates from the zinc-blende to orthorhombic phase transition. Decompression results demonstrated that the phase transition from zinc-blende to orthorhombic and the pressure-induced metallization are reversible. Compared to bulk materials, GaAs nanowires show larger bulk modulus and enhanced transition pressure due to the size effects and high surface energy.